Breakdown mechanisms in Al(GaN) MSM photodetectors

I. Ferguson; M. Schurman; R. F. Karlicek; Z. C. Feng; S. Liang; Y. Lu; C. Joseph

doi:10.1117/12.304503

Breakdown mechanisms in Al(GaN) MSM photodetectors

I. Ferguson
, M. Schurman
, R. F. Karlicek
, Z. C. Feng
, S. Liang
, Y. Lu
, C. Joseph

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

AlGaN based interdigital metal-semiconductor-metal (MSM) photodetectors with 14% Al have been successfully grown and fabricated on sapphire substrates. The devices exhibit large gains up to 10⁶ at high bias voltages, but with very high dark currents, > 1 mA and very long detector responses, > 60 seconds. A negative temperature coefficient for the breakdown voltage was observed indicating that tunneling is occurring. However, at high bias voltages, avalanche breakdown also appears to be present since a constant breakdown field of 10⁵ V/cm was obtained independent of MSM geometry. Avalanche breakdown is nucleated at the non-uniform field distribution at the edge of the MSM finger.

Original language	English (US)
Pages (from-to)	221-226
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3287
DOIs	https://doi.org/10.1117/12.304503
State	Published - 1998
Event	Photodetectors: Materials and Devices III - San Jose, CA, United States Duration: Jan 28 1998 → Jan 30 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Avalanche breakdown
III-Nitrides
Tunneling
UV Photodetector

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10.1117/12.304503

Cite this

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title = "Breakdown mechanisms in Al(GaN) MSM photodetectors",

abstract = "AlGaN based interdigital metal-semiconductor-metal (MSM) photodetectors with 14\% Al have been successfully grown and fabricated on sapphire substrates. The devices exhibit large gains up to 106 at high bias voltages, but with very high dark currents, > 1 mA and very long detector responses, > 60 seconds. A negative temperature coefficient for the breakdown voltage was observed indicating that tunneling is occurring. However, at high bias voltages, avalanche breakdown also appears to be present since a constant breakdown field of 105 V/cm was obtained independent of MSM geometry. Avalanche breakdown is nucleated at the non-uniform field distribution at the edge of the MSM finger.",

keywords = "Avalanche breakdown, III-Nitrides, Tunneling, UV Photodetector",

author = "I. Ferguson and M. Schurman and Karlicek, \{R. F.\} and Feng, \{Z. C.\} and S. Liang and Y. Lu and C. Joseph",

year = "1998",

doi = "10.1117/12.304503",

language = "English (US)",

volume = "3287",

pages = "221--226",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Photodetectors: Materials and Devices III ; Conference date: 28-01-1998 Through 30-01-1998",

}

TY - JOUR

T1 - Breakdown mechanisms in Al(GaN) MSM photodetectors

AU - Ferguson, I.

AU - Schurman, M.

AU - Karlicek, R. F.

AU - Feng, Z. C.

AU - Liang, S.

AU - Lu, Y.

AU - Joseph, C.

PY - 1998

Y1 - 1998

N2 - AlGaN based interdigital metal-semiconductor-metal (MSM) photodetectors with 14% Al have been successfully grown and fabricated on sapphire substrates. The devices exhibit large gains up to 106 at high bias voltages, but with very high dark currents, > 1 mA and very long detector responses, > 60 seconds. A negative temperature coefficient for the breakdown voltage was observed indicating that tunneling is occurring. However, at high bias voltages, avalanche breakdown also appears to be present since a constant breakdown field of 105 V/cm was obtained independent of MSM geometry. Avalanche breakdown is nucleated at the non-uniform field distribution at the edge of the MSM finger.

AB - AlGaN based interdigital metal-semiconductor-metal (MSM) photodetectors with 14% Al have been successfully grown and fabricated on sapphire substrates. The devices exhibit large gains up to 106 at high bias voltages, but with very high dark currents, > 1 mA and very long detector responses, > 60 seconds. A negative temperature coefficient for the breakdown voltage was observed indicating that tunneling is occurring. However, at high bias voltages, avalanche breakdown also appears to be present since a constant breakdown field of 105 V/cm was obtained independent of MSM geometry. Avalanche breakdown is nucleated at the non-uniform field distribution at the edge of the MSM finger.

KW - Avalanche breakdown

KW - III-Nitrides

KW - Tunneling

KW - UV Photodetector

UR - https://www.scopus.com/pages/publications/0032224569

UR - https://www.scopus.com/pages/publications/0032224569#tab=citedBy

U2 - 10.1117/12.304503

DO - 10.1117/12.304503

M3 - Conference article

AN - SCOPUS:0032224569

SN - 0277-786X

VL - 3287

SP - 221

EP - 226

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Photodetectors: Materials and Devices III

Y2 - 28 January 1998 through 30 January 1998

ER -

Breakdown mechanisms in Al(GaN) MSM photodetectors

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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