CASFET: A MOSFET-JFET Cascode Device with Ultralow Gate Capacitance

Lawrence D. Jackel; Robert G. Swartz; Richard E. Howard; Ping Keung Ko; Paul Grabbe

doi:10.1109/T-ED.1984.21783

CASFET: A MOSFET-JFET Cascode Device with Ultralow Gate Capacitance

Lawrence D. Jackel, Robert G. Swartz, Richard E. Howard, Ping Keung Ko, Paul Grabbe

Research output: Contribution to journal › Article

3 Scopus citations

Abstract

A field-effect transistor is described that combines a short-gate MOSFET with a long-channel JFET in a cascode configuration, The composite device, a CASFET, can have a very low input capacitance due to the short gate of the MOSFET combined with the reduced Miller capacitance of the cascode. The long channel of the JFET insures that the CASFET has high output resistance. This paper discusses CASFET fabrication, performance, and modeling.

Original language	English (US)
Pages (from-to)	1752-1758
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	31
Issue number	12
DOIs	https://doi.org/10.1109/T-ED.1984.21783
Publication status	Published - Dec 1984
Externally published	Yes

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Jackel, L. D., Swartz, R. G., Howard, R. E., Ko, P. K., & Grabbe, P. (1984). CASFET: A MOSFET-JFET Cascode Device with Ultralow Gate Capacitance. IEEE Transactions on Electron Devices, 31(12), 1752-1758. https://doi.org/10.1109/T-ED.1984.21783

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Access to Document

10.1109/T-ED.1984.21783