CASFET: A MOSFET-JFET Cascode Device with Ultralow Gate Capacitance

Lawrence D. Jackel, Robert G. Swartz, Richard E. Howard, Ping Keung Ko, Paul Grabbe

Research output: Contribution to journalArticle

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Abstract

A field-effect transistor is described that combines a short-gate MOSFET with a long-channel JFET in a cascode configuration, The composite device, a CASFET, can have a very low input capacitance due to the short gate of the MOSFET combined with the reduced Miller capacitance of the cascode. The long channel of the JFET insures that the CASFET has high output resistance. This paper discusses CASFET fabrication, performance, and modeling.

Original languageEnglish (US)
Pages (from-to)1752-1758
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume31
Issue number12
DOIs
Publication statusPublished - Dec 1984
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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