Channel electron mobility in 4H-SiC lateral junction field effect transistors

P. Sannuti; X. Li; F. Yan; K. Sheng; J. H. Zhao

doi:10.1016/j.sse.2005.10.027

Channel electron mobility in 4H-SiC lateral junction field effect transistors

P. Sannuti, X. Li, F. Yan, K. Sheng, J. H. Zhao

Engn - Elec & Computer Engn

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Interface defects have limited 4H-SiC MOS-based FET channel mobility to less than 40-50 cm²/V s after more than 10 years of improvement. Junction-based FET, on the other hand, presents an excellent opportunity. This paper will report the realization of a record high channel mobility of 398 cm²/V s for 4H-SiC lateral junction FET. The fabrication and characterization as well as computer modeling results will be presented. The application of this very high channel mobility will also be discussed.

Original language	English (US)
Pages (from-to)	1900-1904
Number of pages	5
Journal	Solid-State Electronics
Volume	49
Issue number	12
DOIs	https://doi.org/10.1016/j.sse.2005.10.027
State	Published - Dec 1 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Channel mobility
JFET
Numerical simulation
SiC

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10.1016/j.sse.2005.10.027

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title = "Channel electron mobility in 4H-SiC lateral junction field effect transistors",

abstract = "Interface defects have limited 4H-SiC MOS-based FET channel mobility to less than 40-50 cm2/V s after more than 10 years of improvement. Junction-based FET, on the other hand, presents an excellent opportunity. This paper will report the realization of a record high channel mobility of 398 cm2/V s for 4H-SiC lateral junction FET. The fabrication and characterization as well as computer modeling results will be presented. The application of this very high channel mobility will also be discussed.",

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author = "P. Sannuti and X. Li and F. Yan and K. Sheng and Zhao, {J. H.}",

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TY - JOUR

T1 - Channel electron mobility in 4H-SiC lateral junction field effect transistors

AU - Sannuti, P.

AU - Li, X.

AU - Yan, F.

AU - Sheng, K.

AU - Zhao, J. H.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Interface defects have limited 4H-SiC MOS-based FET channel mobility to less than 40-50 cm2/V s after more than 10 years of improvement. Junction-based FET, on the other hand, presents an excellent opportunity. This paper will report the realization of a record high channel mobility of 398 cm2/V s for 4H-SiC lateral junction FET. The fabrication and characterization as well as computer modeling results will be presented. The application of this very high channel mobility will also be discussed.

AB - Interface defects have limited 4H-SiC MOS-based FET channel mobility to less than 40-50 cm2/V s after more than 10 years of improvement. Junction-based FET, on the other hand, presents an excellent opportunity. This paper will report the realization of a record high channel mobility of 398 cm2/V s for 4H-SiC lateral junction FET. The fabrication and characterization as well as computer modeling results will be presented. The application of this very high channel mobility will also be discussed.

KW - Channel mobility

KW - JFET

KW - Numerical simulation

KW - SiC

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JO - Solid-State Electronics

JF - Solid-State Electronics

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