Channel electron mobility in 4H-SiC lateral junction field effect transistors

P. Sannuti, X. Li, F. Yan, K. Sheng, J. H. Zhao

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Interface defects have limited 4H-SiC MOS-based FET channel mobility to less than 40-50 cm2/V s after more than 10 years of improvement. Junction-based FET, on the other hand, presents an excellent opportunity. This paper will report the realization of a record high channel mobility of 398 cm2/V s for 4H-SiC lateral junction FET. The fabrication and characterization as well as computer modeling results will be presented. The application of this very high channel mobility will also be discussed.

Original languageEnglish (US)
Pages (from-to)1900-1904
Number of pages5
JournalSolid-State Electronics
Volume49
Issue number12
DOIs
StatePublished - Dec 1 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Channel mobility
  • JFET
  • Numerical simulation
  • SiC

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