CHARACTERISATION OF ION-IMPLANTED SILICON ANNEALED BY LASER IRRADIATION.

George Celler, W. L. Brown, L. C. Kimerling, H. J. Leamy, G. L. Miller, J. M. Poate, G. A. Rozgonyi, T. T. Sheng

Research output: Contribution to journalConference article

Abstract

A repetitively Q-switched Nd: YAG laser can 'write' high-quality monocrystalline patterns in ion-implanted amorphous silicon layers. Ion channelling, optical and transmission electron microscopy, electrical resistivity and capacitance transients measurements were utilized to characterize laser-irradiated silicon samples. The results indicate that annealing with nanosecond pulses occurs via melting and epitaxial regrowth of the surface layer.

Original languageEnglish (US)
JournalInstitute of Physics Conference Series
Issue number46
StatePublished - Dec 1 1979
Externally publishedYes
EventInvited and Contrib pap From the Int Conf on Defects and Radiat Eff in Semicond - Nice, Fr
Duration: Sep 11 1978Sep 14 1978

Fingerprint

irradiation
silicon
Q switched lasers
amorphous silicon
lasers
YAG lasers
surface layers
ions
capacitance
melting
transmission electron microscopy
electrical resistivity
annealing
pulses

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Celler, G., Brown, W. L., Kimerling, L. C., Leamy, H. J., Miller, G. L., Poate, J. M., ... Sheng, T. T. (1979). CHARACTERISATION OF ION-IMPLANTED SILICON ANNEALED BY LASER IRRADIATION. Institute of Physics Conference Series, (46).
Celler, George ; Brown, W. L. ; Kimerling, L. C. ; Leamy, H. J. ; Miller, G. L. ; Poate, J. M. ; Rozgonyi, G. A. ; Sheng, T. T. / CHARACTERISATION OF ION-IMPLANTED SILICON ANNEALED BY LASER IRRADIATION. In: Institute of Physics Conference Series. 1979 ; No. 46.
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abstract = "A repetitively Q-switched Nd: YAG laser can 'write' high-quality monocrystalline patterns in ion-implanted amorphous silicon layers. Ion channelling, optical and transmission electron microscopy, electrical resistivity and capacitance transients measurements were utilized to characterize laser-irradiated silicon samples. The results indicate that annealing with nanosecond pulses occurs via melting and epitaxial regrowth of the surface layer.",
author = "George Celler and Brown, {W. L.} and Kimerling, {L. C.} and Leamy, {H. J.} and Miller, {G. L.} and Poate, {J. M.} and Rozgonyi, {G. A.} and Sheng, {T. T.}",
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Celler, G, Brown, WL, Kimerling, LC, Leamy, HJ, Miller, GL, Poate, JM, Rozgonyi, GA & Sheng, TT 1979, 'CHARACTERISATION OF ION-IMPLANTED SILICON ANNEALED BY LASER IRRADIATION.', Institute of Physics Conference Series, no. 46.

CHARACTERISATION OF ION-IMPLANTED SILICON ANNEALED BY LASER IRRADIATION. / Celler, George; Brown, W. L.; Kimerling, L. C.; Leamy, H. J.; Miller, G. L.; Poate, J. M.; Rozgonyi, G. A.; Sheng, T. T.

In: Institute of Physics Conference Series, No. 46, 01.12.1979.

Research output: Contribution to journalConference article

TY - JOUR

T1 - CHARACTERISATION OF ION-IMPLANTED SILICON ANNEALED BY LASER IRRADIATION.

AU - Celler, George

AU - Brown, W. L.

AU - Kimerling, L. C.

AU - Leamy, H. J.

AU - Miller, G. L.

AU - Poate, J. M.

AU - Rozgonyi, G. A.

AU - Sheng, T. T.

PY - 1979/12/1

Y1 - 1979/12/1

N2 - A repetitively Q-switched Nd: YAG laser can 'write' high-quality monocrystalline patterns in ion-implanted amorphous silicon layers. Ion channelling, optical and transmission electron microscopy, electrical resistivity and capacitance transients measurements were utilized to characterize laser-irradiated silicon samples. The results indicate that annealing with nanosecond pulses occurs via melting and epitaxial regrowth of the surface layer.

AB - A repetitively Q-switched Nd: YAG laser can 'write' high-quality monocrystalline patterns in ion-implanted amorphous silicon layers. Ion channelling, optical and transmission electron microscopy, electrical resistivity and capacitance transients measurements were utilized to characterize laser-irradiated silicon samples. The results indicate that annealing with nanosecond pulses occurs via melting and epitaxial regrowth of the surface layer.

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M3 - Conference article

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Celler G, Brown WL, Kimerling LC, Leamy HJ, Miller GL, Poate JM et al. CHARACTERISATION OF ION-IMPLANTED SILICON ANNEALED BY LASER IRRADIATION. Institute of Physics Conference Series. 1979 Dec 1;(46).