CHARACTERISATION OF ION-IMPLANTED SILICON ANNEALED BY LASER IRRADIATION.

George Celler, W. L. Brown, L. C. Kimerling, H. J. Leamy, G. L. Miller, J. M. Poate, G. A. Rozgonyi, T. T. Sheng

Research output: Contribution to journalConference article

Abstract

A repetitively Q-switched Nd: YAG laser can 'write' high-quality monocrystalline patterns in ion-implanted amorphous silicon layers. Ion channelling, optical and transmission electron microscopy, electrical resistivity and capacitance transients measurements were utilized to characterize laser-irradiated silicon samples. The results indicate that annealing with nanosecond pulses occurs via melting and epitaxial regrowth of the surface layer.

Original languageEnglish (US)
JournalInstitute of Physics Conference Series
Issue number46
StatePublished - Dec 1 1979
Externally publishedYes
EventInvited and Contrib pap From the Int Conf on Defects and Radiat Eff in Semicond - Nice, Fr
Duration: Sep 11 1978Sep 14 1978

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • Cite this

    Celler, G., Brown, W. L., Kimerling, L. C., Leamy, H. J., Miller, G. L., Poate, J. M., Rozgonyi, G. A., & Sheng, T. T. (1979). CHARACTERISATION OF ION-IMPLANTED SILICON ANNEALED BY LASER IRRADIATION. Institute of Physics Conference Series, (46).