A repetitively Q-switched Nd: YAG laser can 'write' high-quality monocrystalline patterns in ion-implanted amorphous silicon layers. Ion channelling, optical and transmission electron microscopy, electrical resistivity and capacitance transients measurements were utilized to characterize laser-irradiated silicon samples. The results indicate that annealing with nanosecond pulses occurs via melting and epitaxial regrowth of the surface layer.
|Original language||English (US)|
|Journal||Institute of Physics Conference Series|
|State||Published - Dec 1 1979|
|Event||Invited and Contrib pap From the Int Conf on Defects and Radiat Eff in Semicond - Nice, Fr|
Duration: Sep 11 1978 → Sep 14 1978
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)