Characteristics of continuous cvd of silicon with a moving susceptor

Hoseon Yoo, Yogesh Jaluria

Research output: Contribution to journalConference articlepeer-review


This paper deals with continuous chemical vapor deposition of silicon in a horizontal cold wall reactor, focusing on a moving susceptor. A two-dimensional numerical model, accounting for variable properties, thermal diffusion, radiative exchange among surfaces, and conjugate heat transfer between the gas and susceptor, is developed and validated. Scale analysis for the susceptor energy balance makes it possible to identify the characteristic parameters and infer their qualitative effects a priori, which proves to be consistent with numerical predictions. The results show that the present continuous system is characterized by two newly defined parameters: conductance ratio and susceptor parameter. A pair of performance curves that relate the deposition efficiency to each parameter successfully provide susceptor-related design conditions. It is also revealed that there exists an optimum length of heating zone that maximizes the deposition efficiency.

Original languageEnglish (US)
Pages (from-to)133-141
Number of pages9
JournalAmerican Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD
Issue number6
StatePublished - 2001
Event2001 ASME International Mechanical Engineering Congress and Exposition - New York, NY, United States
Duration: Nov 11 2001Nov 16 2001

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Fluid Flow and Transfer Processes


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