Data are reported on short-channel MOSFET's fabricated in laser crystallized silicon-on-insulator (SOI) structures. In this experiment, special effort was made to minimize enhanced diffusion of dopants from the source and drain regions along grain boundaries. Instead of the standard anneal used for the implant activation, rapid thermal annealing and low temperature furnace annealing were used. These modified processes yielded functional MOSFET's with channel lengths as short as 1. 5 mu m, and ring oscillators of 2. 0 mu m. A speed of 115 ps per stage was obtained in these ring oscillators which is not only the fastest ever reported on any SOI structure, but also a factor of 2 faster than that from the same circuits in bulk Si. The results demonstrate quantitatively the speed improvement of SOI over bulk material due to reduced parasitic capacitance.