Characterization of 4H-SiC gate turn-off thyristor

Lihui Cao, Binghui Li, Jian H. Zhao

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations

Abstract

An 800 V 4H-SiC gate turn-off thyristor (GTO) is fabricated and characterized. The switching characteristics of the SiC GTO investigated over a temperature range from 25°C to 240°C will be presented with a switched current density through anode contact up to 10,000 A/cm2. The turn-on and turn-off times as well as the minority electron lifetime in the p-base region will also be reported as a function of temperature. The high current density capability of the GTO is consistent with the observed reproducible avalanche characteristics of the GTO's anode p+n diode. The maximum controllable current decreases with increasing temperature as a result of carrier mobility degradation.

Original languageEnglish (US)
Pages (from-to)347-352
Number of pages6
JournalSolid-State Electronics
Volume44
Issue number2
DOIs
StatePublished - Feb 1 2000
EventWorkshop on Wide Bandgap Bipolar Devices - Panama City Beach, FL, USA
Duration: Jan 24 1999Jan 28 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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