@inproceedings{9ee1a5dee35a4eeab57d63fcc2212840,
title = "Characterization of gallium nitride grown on (0001) sapphire by plasma-enhanced atomic layer epitaxy",
abstract = "α-GaN thin films have been grown on (0001) sapphire by a plasma-enhanced atomic layer epitaxy (PEALE) technique using a GaN buffer layer grown at lower temperatures. Both single crystal and polycrystal thin films have been obtained depending on the growth conditions, particularly, oxygen contamination of the plasma source and the substrate temperature. The defect structures at the films/ substrate interface were investigated by various X-ray methods such as rocking curves and phi scans, along with plane-view and cross-sectional TEM. Possible growth mechanisms of both the single crystal and polycrystalline films will be discussed.",
author = "Hwang, {C. Y.} and P. Lu and Mayo, {W. E.} and Y. Lu and H. Liu",
year = "1994",
language = "English (US)",
isbn = "1558992251",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "347--352",
booktitle = "Growth, Processing, and Characterization of Semiconductor Heterostructures",
note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",
}