Characterization of misfit dislocations in Si quantum well structures enabled by STEM based aberration correction

Philip E. Batson, Maureen J. Lagos

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The success of aberration correction techniques at the end of the 20th century came at a time of increasing need for atomic resolution imaging to better understand known structural defects that influence semiconductor device operation, and to advance the search for new structures and behavior that will form the basis for devices in the future. With this in mind, it is a pleasure to recognize the contributions of Ondrej Krivanek to the success of aberration correction techniques, and his extension of aberration techniques to EELS equipment that further promises to unite structural studies with characterization of behavior from meV to keV energies in the STEM.

Original languageEnglish (US)
Pages (from-to)34-40
Number of pages7
JournalUltramicroscopy
Volume180
DOIs
StatePublished - Sep 2017

Fingerprint

Aberrations
Dislocations (crystals)
Semiconductor quantum wells
aberration
quantum wells
Electron energy loss spectroscopy
Semiconductor devices
semiconductor devices
Imaging techniques
Defects
defects
energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

Keywords

  • Aberration correction
  • Dislocation structure
  • EELS
  • HAADF
  • Misfit dislocations
  • Phonon

Cite this

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Characterization of misfit dislocations in Si quantum well structures enabled by STEM based aberration correction. / Batson, Philip E.; Lagos, Maureen J.

In: Ultramicroscopy, Vol. 180, 09.2017, p. 34-40.

Research output: Contribution to journalArticle

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