Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique

H. Pernegger, S. Roe, P. Weilhammer, V. Eremin, H. Frais-Kölbl, E. Griesmayer, H. Kagan, S. Schnetzer, R. Stone, W. Trischuk, D. Twitchen, A. Whitehead

Research output: Contribution to journalArticlepeer-review

141 Scopus citations

Abstract

For optimal operation of chemical-vapor deposition (CVD) diamonds as charged particle detectors it is important to have a detailed understanding of the charge-carrier transport mechanism. This includes the determination of electron and hole drift velocities as a function of electric field, charge carrier lifetimes, as well as effective concentration of space charge in the detector bulk. We use the transient-current technique, which allows a direct determination of these parameters in a single measurement, to investigate the charge-carrier properties in a sample of single-crystal CVD diamond. The method is based on the injection of charge using an α source close to the surface and measuring the induced current in the detector electrodes as a function of time.

Original languageEnglish (US)
Article number073704
JournalJournal of Applied Physics
Volume97
Issue number7
DOIs
StatePublished - Apr 1 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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