@inproceedings{1e75ea1bf4bd41c3ba7d5e62dfd28154,
title = "Chemically assisted focused-ion-beam etching for tungsten x-ray mask repair",
abstract = "Finely focused ion beams have been used for repair of defects in photomasks and X-ray masks either by sputter removal of excess absorber material or by deposition of new absorber material. These mask structures employ polycrystalline metal absorbers with grain sizes in the 0.1 micrometers range. As feature dimensions are pushed downward, the effects of these grains become more important. A great deal of roughness can occur during FIB sputter removal of excess absorber for defect repair due to ion channeling and the resulting spatially nonuniform sputtering. In this paper, we describe a method for reducing the roughness in defect repair for Tungsten X-ray masks using chemically assisted FIB etching and a Cr/W/Cr multilayer mask structure.",
author = "Harriott, {Lloyd R.} and Kola, {R. R.} and Celler, {George K.}",
note = "Publisher Copyright: {\textcopyright} COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.; Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III 1993 ; Conference date: 28-01-1993 Through 05-02-1993",
year = "1993",
month = jun,
day = "24",
doi = "10.1117/12.146534",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
pages = "76--81",
editor = "Patterson, {David O.}",
booktitle = "Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III",
address = "United States",
}