Chlorine-induced restructuring of the Cu/Si(111) surface

V. Potapenko, E. Sysoev, V. Ermakov, J. Hinch, R. Strongin, P. Wright, C. Kuivila

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3 Scopus citations


Chlorine-induced restructuring processes on Cu/Si(111) “5×5” surfaces were studied with Auger electron spectroscopy and scanning tunneling microscopy techniques. The copper Auger signal intensities from these surfaces (each with different chlorine exposures and subsequent 450 °C annealing), decreased with increasing initial chlorine exposures. At a Cl-coverage equal to ∼1 ML (after annealing) the Cu signal decreased below the detection limit. The associated restructuring processes were also explored. Initially homogeneous Cu/Si(111) “5×5” surfaces, with Cl-exposures and annealing, separate into coexisting areas of Cu-free Cl/Si(111) 1×1 and nearly chlorine-free areas of Cu/Si(111) “5×5.” The original copper density is conserved by formation of three-dimensional Cu3Si crystallites on the surface. The restructuring is completely reversible; upon desorption of all chlorine at ∼600 °C the surface resumes its original Cu/Si(111) “5×5” structure. Possible implications for the atomic scale mechanisms in the direct synthesis of methylchlorosilanes from Cu/Si surfaces are discussed.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
StatePublished - 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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