Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors

Junho Seo, Chandan De, Hyunsoo Ha, Ji Eun Lee, Sungyu Park, Joonbum Park, Yurii Skourski, Eun Sang Choi, Bongjae Kim, Gil Young Cho, Han Woong Yeom, Sang Wook Cheong, Jae Hoon Kim, Bohm Jung Yang, Kyoo Kim, Jun Sung Kim

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications1,2. Magnets with topological band crossings serve as a good material platform for such control, because their topological band degeneracy can be readily tuned by spin configurations, dramatically modulating electronic conduction3–10. Here we propose that the topological nodal-line degeneracy of spin-polarized bands in magnetic semiconductors induces an extremely large angular response of magnetotransport. Taking a layered ferrimagnet, Mn3Si2Te6, and its derived compounds as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on spin orientation, which leads to a metal–insulator transition in the same ferrimagnetic phase. The resulting variation of angular magnetoresistance with rotating magnetization exceeds a trillion per cent per radian, which we call colossal angular magnetoresistance. Our findings demonstrate that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- and orbital-dependent functionalities.

Original languageEnglish (US)
Pages (from-to)576-581
Number of pages6
Issue number7886
StatePublished - Nov 25 2021

All Science Journal Classification (ASJC) codes

  • General


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