Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique

Electron transport and microwave power generation in the 200-300 GHz frequency range by n⁺-n^--n-n⁺ zincblende GaN and n⁺-p-n-n^--n⁺ wurtzite GaN structures have been studied by a Monte Carlo particle simulation which solves the Boltzmann transport and Poisson's equations along with equations governing the associated circuit elements and parasitic contact resistance. It is shown that at 300 K in the 230-250 GHz frequency range over 350 mW microwave power can be delivered by the n⁺-p-n-n^--n⁺ wurtzite GaN structure in continuous wave operation mode and over 1.3 W in pulsed mode.