Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)

H. C. Lu, E. P. Gusev, T. Gustafsson, D. Brasen, M. L. Green, E. Garfunkel

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12 Scopus citations


The oxynitridation of Si(100) by various sequences of NO, N2O and O2 exposures have been examined using high resolution medium energy ion scattering (MEIS) to determine accurate N and O concentrations and depth profiles. The results demonstrate that: 1) NO-produced oxynitride films have a higher concentration of N in them relative to N2O films, 2) N, once incorporated, significantly retards the rate of continued oxidation (or nitridation) in proportion to the N concentration, and 3) concurrent to nitridation near the interface, under certain conditions N2O exposure may remove N from a film in the overlayer beyond the near-interfacial (∼1.5nm) region, whereas NO is much less effective at removing N.

Original languageEnglish (US)
Pages (from-to)29-32
Number of pages4
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - Jun 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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