The oxynitridation of Si(100) by various sequences of NO, N2O and O2 exposures have been examined using high resolution medium energy ion scattering (MEIS) to determine accurate N and O concentrations and depth profiles. The results demonstrate that: 1) NO-produced oxynitride films have a higher concentration of N in them relative to N2O films, 2) N, once incorporated, significantly retards the rate of continued oxidation (or nitridation) in proportion to the N concentration, and 3) concurrent to nitridation near the interface, under certain conditions N2O exposure may remove N from a film in the overlayer beyond the near-interfacial (∼1.5nm) region, whereas NO is much less effective at removing N.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering