COMPUTER MODELING OF LATERAL EPITAXIAL GROWTH OVER OXIDE.

Lynn O. Wilson, G. K. Celler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Radiative melting of Si with an extended stationary heater and its crystallization are modeled numerically. The two-dimensional model provides the velocity and shape of the solid-liquid interface above and below a buried oxide structure with slit-shaped openings. The results show qualitative agreement with experimental data. Superheating and undercooling are included in the calculation and the amount of superheating is confirmed experimentally.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsD.K. Biegelsen, Charles V. Shank
PublisherMaterials Research Soc
Pages623-628
Number of pages6
ISBN (Print)0931837006
Publication statusPublished - Dec 1 1985
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume35
ISSN (Print)0272-9172

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Wilson, L. O., & Celler, G. K. (1985). COMPUTER MODELING OF LATERAL EPITAXIAL GROWTH OVER OXIDE. In D. K. Biegelsen, & C. V. Shank (Eds.), Materials Research Society Symposia Proceedings (pp. 623-628). (Materials Research Society Symposia Proceedings; Vol. 35). Materials Research Soc.