It was shown in the previous work that the conduction band structure can be obtained using EELS in the relaxed Ge/Si alloy system. It was also noticed that the heterojunction band offset can be obtained from EELS because the Si 2p core level is a constant energy reference level throughout the alloy composition. The present paper shows that a detailed fitting of the shape of the Si L2,3 edge can obtain the bi-axial strain splitting of the conduction band edge as a function of position inside a quantum well. This information can then be correlated with annular dark field images of the cross sectioned well. The specimens examined were both MBE and UHV-CVD grown single wells grown on Si with a Si capping layer. The MBE results are described in this paper.
|Original language||English (US)|
|Number of pages||2|
|Journal||Proceedings - Annual Meeting, Microscopy Society of America|
|State||Published - Dec 1 1993|
|Event||Proceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA|
Duration: Aug 1 1993 → Aug 6 1993
All Science Journal Classification (ASJC) codes