Conduction edge strain splitting in GE-SI quantum wells using EELS

Philip Batson, J. F. Morar

Research output: Contribution to journalConference articlepeer-review


It was shown in the previous work that the conduction band structure can be obtained using EELS in the relaxed Ge/Si alloy system. It was also noticed that the heterojunction band offset can be obtained from EELS because the Si 2p core level is a constant energy reference level throughout the alloy composition. The present paper shows that a detailed fitting of the shape of the Si L2,3 edge can obtain the bi-axial strain splitting of the conduction band edge as a function of position inside a quantum well. This information can then be correlated with annular dark field images of the cross sectioned well. The specimens examined were both MBE and UHV-CVD grown single wells grown on Si with a Si capping layer. The MBE results are described in this paper.

Original languageEnglish (US)
Pages (from-to)816-817
Number of pages2
JournalProceedings - Annual Meeting, Microscopy Society of America
StatePublished - Dec 1 1993
Externally publishedYes
EventProceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA
Duration: Aug 1 1993Aug 6 1993

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Conduction edge strain splitting in GE-SI quantum wells using EELS'. Together they form a unique fingerprint.

Cite this