Chemical Vapor Deposition (CVD) of thin films onto a moving surface is presented in this study. Conjugate heat and mass transfer processes with surface reactions and conduction effects in the susceptor are numerically investigated. The numerical model is validated for silicon deposition through comparisons with analytical results and experimental data. Results show that a moving susceptor with finite thickness can have a significant effect on deposition rates. Films produced by continuous CVD processing are shown to have a strong dependence on several operational parameters. Increasing susceptor speed and susceptor thickness results in lower deposition rates, thereby decreasing the final film thickness. Enhanced film deposition is obtained by the use of low thermal diffusivity material or by increasing the heating zone size. The governing parameters are correlated to include these effects under typical operating conditions. The results and correlations may be used as guidelines for future CVD reactor design.
|Original language||English (US)|
|Number of pages||11|
|Journal||American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD|
|State||Published - 1998|
All Science Journal Classification (ASJC) codes
- Mechanical Engineering
- Fluid Flow and Transfer Processes