Current ramping rate dependence of the critical current in 2H-NbSe2 crystals

Z. L. Xiao, E. Y. Andrei, P. Shuk, M. Greenblatt

Research output: Contribution to journalArticlepeer-review


By measuring the critical current at current ramping rate of 2×10-5 A/s to 5×102 A/s we find that at a fixed temperature and magnetic field the critical current in pure 2H-NbSe2 increases with increasing current ramping rate. These experiments show that metastable states, which are missed in the usual transport measurements, do exist in the field cooled vortex lattice. We also show that the fast transport technique provides a means of probing the initial vortex lattice.

Original languageEnglish (US)
Pages (from-to)1163-1164
Number of pages2
JournalPhysica C: Superconductivity and its applications
Issue numberPART 3
StatePublished - 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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