The effects of starting semi-insulating GaAs conditions on Si-implantation activation efficiency have been studied by capacitance deep level transient spectroscopy, 4.2-K photoluminescence, and thermally stimulated current spectroscopy. Experimental evidence shows that samples with good Si activation efficiency have higher EL2 trap concentration, compared with samples with a lower activation efficiency, and a higher density of trap T2 at Ev +0.49 eV believed to be the native defect AsGa++. For samples with a lower activation efficiency, a deep trap T3 attributed to either VAs or GaAs -VGa appears at E v +0.44 eV with a concentration larger than that of T2. A PL emission at 1.44 eV due to GaAs or its related complex is observed in the samples with a lower activation efficiency, but not in samples with good activation efficiency. Comparison between samples grown under Ga-rich or As-rich conditions and samples that show different activation efficiencies confirms that growth stoichiometric conditions largely determine the Si implantation activation efficiency.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Applied Physics|
|State||Published - 1989|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)