Delay Time in GaAs High-Power High-Speed Photoconductive Switching Devices

L. Q. Zu, Y. Lu, H. Shen, M. Dutta

Research output: Contribution to journalArticle

4 Scopus citations


The delay time between the beginning of optical illumination and the onset of switching in the transient response of semi-insulating GaAs high-power high-speed photoconductive switching devices is investigated in this letter. The field-and laser-energy-dependent optical absorption coefficient is used to explain the experimentally observed open-state-field and laser-energy-dependent delay time. Our calculations agree with the experimental results.

Original languageEnglish (US)
Pages (from-to)710-712
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number6
StatePublished - Jun 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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