Demonstration of 140 A, 800 V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures

P. Alexandrov; J. H. Zhao; W. Wright; M. Pan; M. Weiner

doi:10.1049/el:20010777

Demonstration of 140 A, 800 V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures

P. Alexandrov, J. H. Zhao, W. Wright, M. Pan, M. Weiner

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

DC test results of MPS diodes using multi-step junction termination extension (MJTE) designs are presented. The measurements include reverse leakage current, breakdown, and forward voltage drop. The MJTE design allows full utilisation of the large breakdown properties of SiC. Packaged diodes, containing multiple MPS cells with MJTE designs, also are described.

Original language	English (US)
Pages (from-to)	1139-1140
Number of pages	2
Journal	Electronics Letters
Volume	37
Issue number	18
DOIs	https://doi.org/10.1049/el:20010777
State	Published - Aug 30 2001

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20010777

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title = "Demonstration of 140 A, 800 V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures",

abstract = "DC test results of MPS diodes using multi-step junction termination extension (MJTE) designs are presented. The measurements include reverse leakage current, breakdown, and forward voltage drop. The MJTE design allows full utilisation of the large breakdown properties of SiC. Packaged diodes, containing multiple MPS cells with MJTE designs, also are described.",

author = "P. Alexandrov and Zhao, {J. H.} and W. Wright and M. Pan and M. Weiner",

year = "2001",

month = aug,

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AU - Alexandrov, P.

AU - Zhao, J. H.

AU - Wright, W.

AU - Pan, M.

AU - Weiner, M.

PY - 2001/8/30

Y1 - 2001/8/30

N2 - DC test results of MPS diodes using multi-step junction termination extension (MJTE) designs are presented. The measurements include reverse leakage current, breakdown, and forward voltage drop. The MJTE design allows full utilisation of the large breakdown properties of SiC. Packaged diodes, containing multiple MPS cells with MJTE designs, also are described.

AB - DC test results of MPS diodes using multi-step junction termination extension (MJTE) designs are presented. The measurements include reverse leakage current, breakdown, and forward voltage drop. The MJTE design allows full utilisation of the large breakdown properties of SiC. Packaged diodes, containing multiple MPS cells with MJTE designs, also are described.

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Demonstration of 140 A, 800 V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures

Abstract

All Science Journal Classification (ASJC) codes

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