Demonstration of 4H-SiC avalanche photodiodes linear array

F. Yan; C. Qin; J. H. Zhao; M. Bush; G. Olsen; B. K. Ng; J. P.R. David; R. C. Tozer; M. Weiner

doi:10.1016/S0038-1101(02)00201-0

Demonstration of 4H-SiC avalanche photodiodes linear array

F. Yan, C. Qin, J. H. Zhao, M. Bush, G. Olsen, B. K. Ng, J. P.R. David, R. C. Tozer, M. Weiner

Engn - Elec & Computer Engn

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

4H-SiC visible blind avalanche photodiode (APD) linear arrays have been fabricated and successfully tested. A 40 pixel linear array with only one bad pixel has been demonstrated. The linear arrays show uniform breakdown voltage and low leakage current. The photoresponse and the excess noise factor of 4H-SiC APD pixels have been studied. A very high multiplication gain with very low excess noise factors is reported.

Original language	English (US)
Pages (from-to)	241-245
Number of pages	5
Journal	Solid-State Electronics
Volume	47
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1101(02)00201-0
State	Published - Feb 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

4H-SiC
Avalanche breakdown
Avalanche photodiodes
Excess noise factor
Linear arrays
Visible blind UV detectors

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10.1016/S0038-1101(02)00201-0

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@article{abd043b3223d4be196c21668149b829b,

title = "Demonstration of 4H-SiC avalanche photodiodes linear array",

abstract = "4H-SiC visible blind avalanche photodiode (APD) linear arrays have been fabricated and successfully tested. A 40 pixel linear array with only one bad pixel has been demonstrated. The linear arrays show uniform breakdown voltage and low leakage current. The photoresponse and the excess noise factor of 4H-SiC APD pixels have been studied. A very high multiplication gain with very low excess noise factors is reported.",

keywords = "4H-SiC, Avalanche breakdown, Avalanche photodiodes, Excess noise factor, Linear arrays, Visible blind UV detectors",

author = "F. Yan and C. Qin and Zhao, {J. H.} and M. Bush and G. Olsen and Ng, {B. K.} and David, {J. P.R.} and Tozer, {R. C.} and M. Weiner",

note = "Funding Information: The authors would like to acknowledge the financial support provided by a NASA SBIR program managed by Dr. Virgil Shields.",

year = "2003",

month = feb,

doi = "10.1016/S0038-1101(02)00201-0",

language = "English (US)",

volume = "47",

pages = "241--245",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "2",

}

TY - JOUR

T1 - Demonstration of 4H-SiC avalanche photodiodes linear array

AU - Yan, F.

AU - Qin, C.

AU - Zhao, J. H.

AU - Bush, M.

AU - Olsen, G.

AU - Ng, B. K.

AU - David, J. P.R.

AU - Tozer, R. C.

AU - Weiner, M.

N1 - Funding Information: The authors would like to acknowledge the financial support provided by a NASA SBIR program managed by Dr. Virgil Shields.

PY - 2003/2

Y1 - 2003/2

N2 - 4H-SiC visible blind avalanche photodiode (APD) linear arrays have been fabricated and successfully tested. A 40 pixel linear array with only one bad pixel has been demonstrated. The linear arrays show uniform breakdown voltage and low leakage current. The photoresponse and the excess noise factor of 4H-SiC APD pixels have been studied. A very high multiplication gain with very low excess noise factors is reported.

AB - 4H-SiC visible blind avalanche photodiode (APD) linear arrays have been fabricated and successfully tested. A 40 pixel linear array with only one bad pixel has been demonstrated. The linear arrays show uniform breakdown voltage and low leakage current. The photoresponse and the excess noise factor of 4H-SiC APD pixels have been studied. A very high multiplication gain with very low excess noise factors is reported.

KW - 4H-SiC

KW - Avalanche breakdown

KW - Avalanche photodiodes

KW - Excess noise factor

KW - Linear arrays

KW - Visible blind UV detectors

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DO - 10.1016/S0038-1101(02)00201-0

M3 - Article

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VL - 47

SP - 241

EP - 245

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 2

ER -

Demonstration of 4H-SiC avalanche photodiodes linear array

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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