Demonstration of 4H-SiC avalanche photodiodes linear array

F. Yan, C. Qin, J. H. Zhao, M. Bush, G. Olsen, B. K. Ng, J. P.R. David, R. C. Tozer, M. Weiner

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

4H-SiC visible blind avalanche photodiode (APD) linear arrays have been fabricated and successfully tested. A 40 pixel linear array with only one bad pixel has been demonstrated. The linear arrays show uniform breakdown voltage and low leakage current. The photoresponse and the excess noise factor of 4H-SiC APD pixels have been studied. A very high multiplication gain with very low excess noise factors is reported.

Original languageEnglish (US)
Pages (from-to)241-245
Number of pages5
JournalSolid-State Electronics
Volume47
Issue number2
DOIs
StatePublished - Feb 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • 4H-SiC
  • Avalanche breakdown
  • Avalanche photodiodes
  • Excess noise factor
  • Linear arrays
  • Visible blind UV detectors

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