Demonstration of 4H-SiC power bipolar junction transistors

Y. Luo, L. Fursin, J. H. Zhao

Research output: Contribution to journalArticlepeer-review

49 Scopus citations


The first demonstration of 4H-SiC power bipolar junction transistors is reported. The detailed device structure along with the multi-step junction termination extension design dimensions is described. The DC I-V characteristics at room temperature and 250 °C of the fabricated bipolar junction transistors are measured and reported.

Original languageEnglish (US)
Pages (from-to)1496-1497
Number of pages2
JournalElectronics Letters
Issue number17
StatePublished - Aug 17 2000

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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