Demonstration of 4H-SiC power bipolar junction transistors

Y. Luo; L. Fursin; J. H. Zhao

doi:10.1049/el:20001059

Demonstration of 4H-SiC power bipolar junction transistors

Y. Luo, L. Fursin, J. H. Zhao

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

The first demonstration of 4H-SiC power bipolar junction transistors is reported. The detailed device structure along with the multi-step junction termination extension design dimensions is described. The DC I-V characteristics at room temperature and 250 °C of the fabricated bipolar junction transistors are measured and reported.

Original language	English (US)
Pages (from-to)	1496-1497
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	17
DOIs	https://doi.org/10.1049/el:20001059
State	Published - Aug 17 2000

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20001059

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@article{78f1d7a881d74d119879331010996a47,

title = "Demonstration of 4H-SiC power bipolar junction transistors",

abstract = "The first demonstration of 4H-SiC power bipolar junction transistors is reported. The detailed device structure along with the multi-step junction termination extension design dimensions is described. The DC I-V characteristics at room temperature and 250 °C of the fabricated bipolar junction transistors are measured and reported.",

author = "Y. Luo and L. Fursin and Zhao, {J. H.}",

year = "2000",

month = aug,

day = "17",

doi = "10.1049/el:20001059",

language = "English (US)",

volume = "36",

pages = "1496--1497",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "17",

}

TY - JOUR

T1 - Demonstration of 4H-SiC power bipolar junction transistors

AU - Luo, Y.

AU - Fursin, L.

AU - Zhao, J. H.

PY - 2000/8/17

Y1 - 2000/8/17

N2 - The first demonstration of 4H-SiC power bipolar junction transistors is reported. The detailed device structure along with the multi-step junction termination extension design dimensions is described. The DC I-V characteristics at room temperature and 250 °C of the fabricated bipolar junction transistors are measured and reported.

AB - The first demonstration of 4H-SiC power bipolar junction transistors is reported. The detailed device structure along with the multi-step junction termination extension design dimensions is described. The DC I-V characteristics at room temperature and 250 °C of the fabricated bipolar junction transistors are measured and reported.

UR - http://www.scopus.com/inward/record.url?scp=0034248277&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034248277&partnerID=8YFLogxK

U2 - 10.1049/el:20001059

DO - 10.1049/el:20001059

M3 - Article

AN - SCOPUS:0034248277

SN - 0013-5194

VL - 36

SP - 1496

EP - 1497

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

Demonstration of 4H-SiC power bipolar junction transistors

Abstract

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