The first demonstration of 4H-SiC power bipolar junction transistors is reported. The detailed device structure along with the multi-step junction termination extension design dimensions is described. The DC I-V characteristics at room temperature and 250 °C of the fabricated bipolar junction transistors are measured and reported.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Aug 17 2000|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering