@inproceedings{c0ac181b47754cbfa52327f09f6f4bd1,
title = "Demonstration of a 140 A, 800 V, fast recover 4H-SiC P-i-N/Schottky barrier (MPS) diode",
abstract = "DC and transient test results of high power, fast recovery 4H-SiC MPS diodes using multi-step junction termination (MJTE) designs are presented. The MJTE design allows full utilization of the superior breakdown properties of SiC. 4H-SiC MPS diode DC properties were studied and the transient properties were obtained by using an inductively-loaded half-bridge inverter circuit at high current and high temperatures (high-T). Results show that the replacement of Si freewheeling diodes by SiC diodes results in far less storage charge in the diodes and substantial reduction in diode turn-off energy loss, especially at high-T.",
author = "P. Alexandrov and W. Wright and M. Pan and M. Weiner and L. Jiao and Zhao, {J. H.}",
note = "Publisher Copyright: {\textcopyright} 2001 ISDRS-Univ of Maryland.; International Semiconductor Device Research Symposium, ISDRS 2001 ; Conference date: 05-12-2001 Through 07-12-2001",
year = "2001",
doi = "10.1109/ISDRS.2001.984427",
language = "English (US)",
series = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "13--16",
booktitle = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",
address = "United States",
}