Demonstration of first 10 kV, 130 mΩcm2 normally-off 4H-SiC trenched-and-implanted vertical junction field-effect transistor

P. Alexandrov; J. Zhang; X. Li; J. H. Zhao

doi:10.1049/el:20031214

Demonstration of first 10 kV, 130 mΩcm² normally-off 4H-SiC trenched-and-implanted vertical junction field-effect transistor

P. Alexandrov, J. Zhang, X. Li, J. H. Zhao

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The first demonstration of a trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistor with a 120 μm ∼4.9 × 10¹⁴ cm^-3 doped drift layer is reported, resulting in a record high blocking voltage V_B of 10 400 V and a specific on-resistance (R_{SP_ON}) of 130 mΩ cm², leading to the highest V_B²/R_{SP_ON} of 832 MW/cm² reported to date for normally-off SiC FETs.

Original language	English (US)
Pages (from-to)	1860-1861
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	25
DOIs	https://doi.org/10.1049/el:20031214
State	Published - Dec 11 2003

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20031214

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abstract = "The first demonstration of a trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistor with a 120 μm ∼4.9 × 1014 cm-3 doped drift layer is reported, resulting in a record high blocking voltage VB of 10 400 V and a specific on-resistance (RSP_ON) of 130 mΩ cm2, leading to the highest VB2/RSP_ON of 832 MW/cm2 reported to date for normally-off SiC FETs.",

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AU - Alexandrov, P.

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AU - Li, X.

AU - Zhao, J. H.

PY - 2003/12/11

Y1 - 2003/12/11

N2 - The first demonstration of a trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistor with a 120 μm ∼4.9 × 1014 cm-3 doped drift layer is reported, resulting in a record high blocking voltage VB of 10 400 V and a specific on-resistance (RSP_ON) of 130 mΩ cm2, leading to the highest VB2/RSP_ON of 832 MW/cm2 reported to date for normally-off SiC FETs.

AB - The first demonstration of a trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistor with a 120 μm ∼4.9 × 1014 cm-3 doped drift layer is reported, resulting in a record high blocking voltage VB of 10 400 V and a specific on-resistance (RSP_ON) of 130 mΩ cm2, leading to the highest VB2/RSP_ON of 832 MW/cm2 reported to date for normally-off SiC FETs.

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Demonstration of first 10 kV, 130 mΩcm² normally-off 4H-SiC trenched-and-implanted vertical junction field-effect transistor

Abstract

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