Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor

J. Zhang, Jian Zhao, P. Alexandrov, T. Burke

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The first demonstration is reported of a high-voltage (9.2 kV) 4H-SiC bipolar junction transistor (BJT) based on a 50 μm, 7 × 10 14 cm-3 doped drift layer, achieving an emitter current density of 150 A/cm2 at VCEO = 5V, suggesting a specific on-resistance (RSP_ON) of 33 mΩ cm2 without considering current spreading or 49 mΩ cm2 if current spreading is considered. The result far exceeds the previous 4H-SJC BJT record of 3.2 kV with RSP_ON= 78 mΩ cm2.

Original languageEnglish (US)
Pages (from-to)1381-1383
Number of pages3
JournalElectronics Letters
Volume40
Issue number21
DOIs
StatePublished - Oct 14 2004

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Bipolar transistors
Demonstrations
Current density
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Zhang, J. ; Zhao, Jian ; Alexandrov, P. ; Burke, T. / Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor. In: Electronics Letters. 2004 ; Vol. 40, No. 21. pp. 1381-1383.
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Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor. / Zhang, J.; Zhao, Jian; Alexandrov, P.; Burke, T.

In: Electronics Letters, Vol. 40, No. 21, 14.10.2004, p. 1381-1383.

Research output: Contribution to journalArticle

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