Demonstration of high performance visible-blind 4H-SiC avalanche photodiodes

Feng Yan, Yanbin Luo, Jian H. Zhao, Chris Dries, Gregory Olsen

Research output: Contribution to journalConference articlepeer-review


4H-SiC visible-blind reach-through avalanche photodiodes (RAPDs) are designed and fabricated with mesa edge termination and thermal oxide passivation techniques. The devices show a `hard' avalanche breakdown with a positive temperature coefficient, a wide spectral range (285 nm to 360 nm) with higher than 100 A/W photoresponsivity, and a peak photoresponsivity of 738 A/W at 320 nm. The visible-blind rejection ratio, defined as the maximum responsivity divided by the responsivity at 400 nm, has a maximum value of about 2500 at 93.9 V reverse bias. The APD photoresponse speed is studied and a fall time of 4.0 ns is measured.

Original languageEnglish (US)
Pages (from-to)II/-
JournalMaterials Science Forum
StatePublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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