Demonstration of the first SiC power integrated circuit

Kuang Sheng; Yongxi Zhang; Ming Su; Jian H. Zhao; Xueqing Li; Petre Alexandrov; Leonid Fursin

doi:10.1016/j.sse.2008.06.037

Demonstration of the first SiC power integrated circuit

Kuang Sheng, Yongxi Zhang, Ming Su, Jian H. Zhao, Xueqing Li, Petre Alexandrov, Leonid Fursin

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

This paper will discuss the development of SiC lateral power junction field-effect transistors (JFETs) and ICs. Normally-off RESURF vertical-channel lateral power JFETs are fabricated and characterized. New results for the first demonstration of SiC Power ICs are presented and the potential for distributed DC-DC power converters at high frequencies is discussed.

Original language	English (US)
Pages (from-to)	1636-1646
Number of pages	11
Journal	Solid-State Electronics
Volume	52
Issue number	10
DOIs	https://doi.org/10.1016/j.sse.2008.06.037
State	Published - Oct 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

High temperature electronics
Junction field-effect transistor (JFET)
Normally off
Power integrated circuits
RESURF
Silicon carbide

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10.1016/j.sse.2008.06.037

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title = "Demonstration of the first SiC power integrated circuit",

abstract = "This paper will discuss the development of SiC lateral power junction field-effect transistors (JFETs) and ICs. Normally-off RESURF vertical-channel lateral power JFETs are fabricated and characterized. New results for the first demonstration of SiC Power ICs are presented and the potential for distributed DC-DC power converters at high frequencies is discussed.",

keywords = "High temperature electronics, Junction field-effect transistor (JFET), Normally off, Power integrated circuits, RESURF, Silicon carbide",

author = "Kuang Sheng and Yongxi Zhang and Ming Su and Zhao, {Jian H.} and Xueqing Li and Petre Alexandrov and Leonid Fursin",

note = "Funding Information: This work was supported by a subcontract from United Silicon carbide, Inc. under an NSF SBIR program managed by Dr. M. Nair.",

year = "2008",

month = oct,

doi = "10.1016/j.sse.2008.06.037",

language = "English (US)",

volume = "52",

pages = "1636--1646",

journal = "Solid-State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - Demonstration of the first SiC power integrated circuit

AU - Sheng, Kuang

AU - Zhang, Yongxi

AU - Su, Ming

AU - Zhao, Jian H.

AU - Li, Xueqing

AU - Alexandrov, Petre

AU - Fursin, Leonid

N1 - Funding Information: This work was supported by a subcontract from United Silicon carbide, Inc. under an NSF SBIR program managed by Dr. M. Nair.

PY - 2008/10

Y1 - 2008/10

N2 - This paper will discuss the development of SiC lateral power junction field-effect transistors (JFETs) and ICs. Normally-off RESURF vertical-channel lateral power JFETs are fabricated and characterized. New results for the first demonstration of SiC Power ICs are presented and the potential for distributed DC-DC power converters at high frequencies is discussed.

AB - This paper will discuss the development of SiC lateral power junction field-effect transistors (JFETs) and ICs. Normally-off RESURF vertical-channel lateral power JFETs are fabricated and characterized. New results for the first demonstration of SiC Power ICs are presented and the potential for distributed DC-DC power converters at high frequencies is discussed.

KW - High temperature electronics

KW - Junction field-effect transistor (JFET)

KW - Normally off

KW - Power integrated circuits

KW - RESURF

KW - Silicon carbide

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M3 - Article

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SN - 0038-1101

VL - 52

SP - 1636

EP - 1646

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

Demonstration of the first SiC power integrated circuit

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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