Demonstration of the first SiC power integrated circuit

Kuang Sheng, Yongxi Zhang, Ming Su, Jian H. Zhao, Xueqing Li, Petre Alexandrov, Leonid Fursin

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


This paper will discuss the development of SiC lateral power junction field-effect transistors (JFETs) and ICs. Normally-off RESURF vertical-channel lateral power JFETs are fabricated and characterized. New results for the first demonstration of SiC Power ICs are presented and the potential for distributed DC-DC power converters at high frequencies is discussed.

Original languageEnglish (US)
Pages (from-to)1636-1646
Number of pages11
JournalSolid-State Electronics
Issue number10
StatePublished - Oct 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


  • High temperature electronics
  • Junction field-effect transistor (JFET)
  • Normally off
  • Power integrated circuits
  • Silicon carbide


Dive into the research topics of 'Demonstration of the first SiC power integrated circuit'. Together they form a unique fingerprint.

Cite this