Determination of the atomic structure of the epitaxial CoSi2:Si(111) interface using high-resolution Rutherford backscattering

A. E.M.J. Fischer, T. Gustafsson, J. F. Van Der Veen

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

High-resolution Rutherford backscattering is employed to study the atomic structure at the epitaxial CoSi2:Si(111) interface. The Si atoms of the substrate are found to bond to Co atoms in the silicide. In this bonding arrangement the interface Co atoms are fivefold, or possibly eightfold, coordinated. Bond-angle distortions are essentially absent.

Original languageEnglish (US)
Pages (from-to)6305-6310
Number of pages6
JournalPhysical Review B
Volume37
Issue number11
DOIs
StatePublished - 1988

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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