Determination of the charge collection efficiency in neutron irradiated silicon detectors

M. K. Petterson, R. F. Hurley, K. Arya, C. Betancourt, M. Bruzzi, B. Colby, M. Gerling, C. Meyer, J. Pixley, T. Rice, H. F.W. Sadrozinski, M. Scaringella, J. Bernardini, L. Borrello, F. Fiori, A. Messineo

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The charge collected from p-type silicon strip sensors irradiated to SuperLHC fluences has been determined with a beta source using fast front-end electronics. The bias voltage dependence of the collected charge and the hit detection efficiency have been measured before and after accelerated annealing. Predictions of the performance at the SuperLHC are derived.

Original languageEnglish (US)
Article number5341447
Pages (from-to)3828-3833
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume56
Issue number6
DOIs
StatePublished - Dec 1 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Keywords

  • Detectors
  • High-energy physics
  • Radiation damage
  • Silicon

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  • Cite this

    Petterson, M. K., Hurley, R. F., Arya, K., Betancourt, C., Bruzzi, M., Colby, B., Gerling, M., Meyer, C., Pixley, J., Rice, T., Sadrozinski, H. F. W., Scaringella, M., Bernardini, J., Borrello, L., Fiori, F., & Messineo, A. (2009). Determination of the charge collection efficiency in neutron irradiated silicon detectors. IEEE Transactions on Nuclear Science, 56(6), 3828-3833. [5341447]. https://doi.org/10.1109/TNS.2009.2033995