Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), (000 1 ¯), and (11 2 ¯ 0) surfaces

Gang Liu, Can Xu, Boris Yakshinskiy, Leszek Wielunski, Torgny Gustafsson, Joseph Bloch, Sarit Dhar, Leonard C. Feldman

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We report results on deuterium absorption on several oxidized 4H-SiC surfaces following D2O vapor absorption. Absorption at the oxide/semiconductor interface is strongly face dependent with an order of magnitude more deuterium on the C-face and a-face than on the Si-face, in contrast to the bulk of the oxides which show essentially no face dependence. Annealing in NO gas produces a large reduction in interfacial deuterium absorption in all cases. The reduction of the positive charge at the interface scales linearly with the interface D content. These results also scale with the variation in interface trap density (Dit) and mobility on the three faces after wet oxidation annealing.

Original languageEnglish (US)
Article number123502
JournalApplied Physics Letters
Issue number12
StatePublished - Mar 23 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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