Development of 4H-SiC LJFET-based power IC

Yongxi Zhang, Kuang Sheng, Ming Su, Jian H. Zhao, Petre Alexandrov, Xueqing Li, Leonid Fursin, Maurice Weiner

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


A novel lateral junction field-effect transistor (JFET)-based power IC technology in 4H-SiC is presented in detail covering device and circuit design, fabrication, and characterization. The optimal reduced surface field design for the lateral power JFET has been carried out and implemented in the IC fabrication. Since this technology has great promise at high temperatures, the temperature dependences (from room temperature to 300 °C) of the threshold voltage, transconductance, resistance, and electron mobility have been fully characterized. Advantages of the SiC vertical-channel lateral JFET (VC-LJFET) technology, such as lower output capacitance (COSS) for lateral power JFETs and adjustable threshold voltages at mask design level, are also discussed. Finally, a monolithic power IC chip integrating a power lateral JFET with its low-voltage buffers is presented, which demonstrated megahertz switching at a power level of 270 W. The successful development of the VC-LJFET technology should hasten the introduction of SiC smart power ICs and eventually the system-on-a-chip applications in harsh environments.

Original languageEnglish (US)
Pages (from-to)1934-1945
Number of pages12
JournalIEEE Transactions on Electron Devices
Issue number8
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


  • High-temperature electronics
  • Junction fieldeffect transistor (JFET)
  • Normally off
  • Power integrated circuits
  • Reduced surface electric field (RESURF) effect
  • Silicon carbide (SiC)


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