Development of high temperature lateral HV and LV JFETs in 4H-SiC

Y. Zhang, K. Sheng, M. Su, J. H. Zhao, P. Alexandrov, L. Fursin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A series of high voltage (HV) and low voltage (LV) lateral JFETs are successfully developed in 4H-SiC based on the vertical channel LJFET (VC-LJFET) device platform. Both room temperature and 300 °C characterizations are presented. The HV JFET shows a specific-on resistance of 12.8 mΩcm and is capable of conducting current larger than 3 A at room temperature. A threshold voltage drop of about 0.5 V for HV and LV JFETs is observed when temperature varies from room temperature to 300 °C. The measured increase of specific-on resistance with temperature due to a reduction of electron mobility agrees with the numerical prediction. The first demonstration of SiC power integrated circuits (PIC) is also reported, which shows 5 MHz switching at Vds of 200 V and on-state current of 0.4 A.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages1091-1094
Number of pages4
ISBN (Print)9780878493579
DOIs
StatePublished - 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Country/TerritoryJapan
CityOtsu
Period10/14/0710/19/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • High temperature
  • Junction field-effect transistor (JFET)
  • Power integrated circuits
  • Silicon carbide (SiC)

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