Deviation of the quantum hall effect from exact quantization in narrow GaAs-AlxGa1-xAs heterostructure devices

A. M. Chang, G. Timp, T. Y. Chang, J. E. Cunningham, P. M. Mankiewich, R. E. Behringer, R. E. Howard

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

We report the first observation of deviaton of the i=4 quantum Hall plateau from its quantized value, in narrow GaAs-AlxGa1-xAs quasi-1-d wires of width 2000A. The deviation arises in the form of aperiodic fluctuations as the magnetic field is varied, even though a deep minimum developes in longitudinal resistance. The fluctuation size grows with decreasing temperature and can be as large as 250Ω at 50mK. We suggest the observations arise from a combination of localization and Aharonov-Bohm quantum interference effects.

Original languageEnglish (US)
Pages (from-to)769-772
Number of pages4
JournalSolid State Communications
Volume67
Issue number8
DOIs
StatePublished - Aug 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Deviation of the quantum hall effect from exact quantization in narrow GaAs-Al<sub>x</sub>Ga<sub>1-x</sub>As heterostructure devices'. Together they form a unique fingerprint.

Cite this