TY - GEN
T1 - Dielectric and ferroelectric properties of BNT-based thin films by pulsed laser deposition
AU - Hejazi, Mehdi
AU - Safari, Ahmad
PY - 2010
Y1 - 2010
N2 - We have studied the effect of laser repetition rate on the microstructure, crystallographic orientation, dielectric and ferroelectric properties of pulsed laser deposited 0.94(Bi0.5Na0.5)TiO3-0. 04(Bi0.5K0.5)TiO3-0.02BaTiO3 thin films on SrRuO3 coated SrTiO3 substrates. The films were deposited at different repletion rates of 2 Hz, 4 Hz and 8 Hz, while the other processing parameters such as the substrate temperature and oxygen partial pressure were kept constant. It has been demonstrated that the film made at 4 Hz has been epitaxially grown on the substrate with a smooth and flawless surface and shows the best ferroelectric properties among the investigated films. The remnant polarization and dielectric constant for this film were measured to be 13.6 μC.cm-2 and 425 (at 1 MHz). The leakage current density of the optimized film is 1.3>10-5 A.cm-2 at 320 kV.cm -1, which is about 3 orders of magnitude lower than those observed in the films prepared at repetition rates of 2 Hz and 8 Hz. The remnant polarizations for the films deposited at 2 Hz and 8 Hz were found to be 8.7 μC.cm-2 and 7.6 μC.cm-2, respectively.
AB - We have studied the effect of laser repetition rate on the microstructure, crystallographic orientation, dielectric and ferroelectric properties of pulsed laser deposited 0.94(Bi0.5Na0.5)TiO3-0. 04(Bi0.5K0.5)TiO3-0.02BaTiO3 thin films on SrRuO3 coated SrTiO3 substrates. The films were deposited at different repletion rates of 2 Hz, 4 Hz and 8 Hz, while the other processing parameters such as the substrate temperature and oxygen partial pressure were kept constant. It has been demonstrated that the film made at 4 Hz has been epitaxially grown on the substrate with a smooth and flawless surface and shows the best ferroelectric properties among the investigated films. The remnant polarization and dielectric constant for this film were measured to be 13.6 μC.cm-2 and 425 (at 1 MHz). The leakage current density of the optimized film is 1.3>10-5 A.cm-2 at 320 kV.cm -1, which is about 3 orders of magnitude lower than those observed in the films prepared at repetition rates of 2 Hz and 8 Hz. The remnant polarizations for the films deposited at 2 Hz and 8 Hz were found to be 8.7 μC.cm-2 and 7.6 μC.cm-2, respectively.
KW - BNT
KW - Lead-free piezoelectric
KW - Pulsed laser deposition
KW - Thin film
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U2 - 10.1109/ISAF.2010.5712261
DO - 10.1109/ISAF.2010.5712261
M3 - Conference contribution
AN - SCOPUS:79953045247
SN - 9781424481910
T3 - Proceedings of the 2010 IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2010, Co-located with the 10th European Conference on the Applications of Polar Dielectrics, ECAPD 2010
BT - Proceedings of the 2010 IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2010, Co-located with the 10th European Conference on the Applications of Polar Dielectrics, ECAPD 2010
T2 - 2010 IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2010, Co-located with the 10th European Conference on the Applications of Polar Dielectrics, ECAPD 2010
Y2 - 9 August 2010 through 12 August 2010
ER -