Dielectric properties of (Ba 0.60, Sr 0.40)TiO 3 thin films on NdGaO 3 substrates at 10 GHz

W. K. Simon; E. K. Akdogan; J. Bellotti; A. Safari

Dielectric properties of (Ba _0.60, Sr _0.40)TiO ₃ thin films on NdGaO ₃ substrates at 10 GHz

W. K. Simon, E. K. Akdogan, J. Bellotti, A. Safari

School of Engineering, Materials Science & Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

This work investigates the effects of anisotropic epitaxial strains on the microwave frequency dielectric response of BST (60/40) thin films. Dielectric properties such as permittivity and tunability along the 〈-110〉, 〈-111〉 and 〈001〉 cristallographic directions correlate well with the variation of elastic strain energy as a function of film thickness. We demonstrate unequivocally that the maximum permittivity and tunability is obtained along a crystallographic direction where the strain is a minimum.

Original language	English (US)
Pages	47-50
Number of pages	4
State	Published - 2005
Event	2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S) - Montreal, Canada Duration: Aug 23 2004 → Aug 27 2004

Other

Other	2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S)
Country/Territory	Canada
City	Montreal
Period	8/23/04 → 8/27/04

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Simon, W. K., Akdogan, E. K., Bellotti, J., & Safari, A. (2005). Dielectric properties of (Ba _0.60, Sr _0.40)TiO ₃ thin films on NdGaO ₃ substrates at 10 GHz. 47-50. Paper presented at 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada.

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title = "Dielectric properties of (Ba 0.60, Sr 0.40)TiO 3 thin films on NdGaO 3 substrates at 10 GHz",

abstract = "This work investigates the effects of anisotropic epitaxial strains on the microwave frequency dielectric response of BST (60/40) thin films. Dielectric properties such as permittivity and tunability along the 〈-110〉, 〈-111〉 and 〈001〉 cristallographic directions correlate well with the variation of elastic strain energy as a function of film thickness. We demonstrate unequivocally that the maximum permittivity and tunability is obtained along a crystallographic direction where the strain is a minimum.",

author = "Simon, {W. K.} and Akdogan, {E. K.} and J. Bellotti and A. Safari",

year = "2005",

language = "English (US)",

pages = "47--50",

note = "2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S) ; Conference date: 23-08-2004 Through 27-08-2004",

}

Simon, WK, Akdogan, EK, Bellotti, J & Safari, A 2005, 'Dielectric properties of (Ba _0.60, Sr _0.40)TiO ₃ thin films on NdGaO ₃ substrates at 10 GHz', Paper presented at 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada, 8/23/04 - 8/27/04 pp. 47-50.

Dielectric properties of (Ba _0.60, Sr _0.40)TiO ₃ thin films on NdGaO ₃ substrates at 10 GHz. / Simon, W. K.; Akdogan, E. K.; Bellotti, J. et al.
2005. 47-50 Paper presented at 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Dielectric properties of (Ba 0.60, Sr 0.40)TiO 3 thin films on NdGaO 3 substrates at 10 GHz

AU - Simon, W. K.

AU - Akdogan, E. K.

AU - Bellotti, J.

AU - Safari, A.

PY - 2005

Y1 - 2005

N2 - This work investigates the effects of anisotropic epitaxial strains on the microwave frequency dielectric response of BST (60/40) thin films. Dielectric properties such as permittivity and tunability along the 〈-110〉, 〈-111〉 and 〈001〉 cristallographic directions correlate well with the variation of elastic strain energy as a function of film thickness. We demonstrate unequivocally that the maximum permittivity and tunability is obtained along a crystallographic direction where the strain is a minimum.

AB - This work investigates the effects of anisotropic epitaxial strains on the microwave frequency dielectric response of BST (60/40) thin films. Dielectric properties such as permittivity and tunability along the 〈-110〉, 〈-111〉 and 〈001〉 cristallographic directions correlate well with the variation of elastic strain energy as a function of film thickness. We demonstrate unequivocally that the maximum permittivity and tunability is obtained along a crystallographic direction where the strain is a minimum.

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T2 - 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S)

Y2 - 23 August 2004 through 27 August 2004

ER -

Dielectric properties of (Ba _0.60, Sr _0.40)TiO ₃ thin films on NdGaO ₃ substrates at 10 GHz

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All Science Journal Classification (ASJC) codes

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