The diffusion kinetics of the aluminum-silicon system at low temperatures has been characterized by a novel technique. This technique employs samples consisting of alternating layers of aluminum and silicon and permits the characterization of the diffusion kinetics at the AlSi interface through the cumulative effects of several hundred interfaces while minimizing the effects of bulk material. The resistivity of these films was monitored by the four-point probe technique during isothermal annealing at temperatures in the range 75-150 °C. The resistivity was observed to increase initially and later decrease, eventually stabilizing at a value lower than the starting resistivity. The increase in resistivity is attributed to an increase in disorder caused by silicon diffusing into the aluminum layers. The decrease in resistivity is attributed to stress relief in the film. Analysis of the data has allowed the calculation of diffusion coefficients, thermal activation energy of diffusion and the gradient energy coefficient.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering