Direct growth of single-crystalline III-V semiconductors on amorphous substrates

Kevin Chen, Rehan Kapadia, Audrey Harker, Sujay Desai, Jeong Seuk Kang, Steven Chuang, Mahmut Tosun, Carolin M. Sutter-Fella, Michael Tsang, Yuping Zeng, Daisuke Kiriya, Jubin Hazra, Surabhi Rao Madhvapathy, Mark Hettick, Yu Ze Chen, James Mastandrea, Matin Amani, Stefano Cabrini, Yu Lun Chueh, Joel W. AgerDaryl C. Chrzan, Ali Javey

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-Vâ €™ s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-Vâ €™ s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-Vâ €™ s on application-specific substrates by direct growth.

Original languageEnglish (US)
Article number10502
JournalNature communications
StatePublished - Jan 27 2016

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • General
  • Physics and Astronomy(all)


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