Direct-write of PZT thick films

M. Allahverdi, Ahmad Safari

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

Lead zirconate titanate (PZT) thick films have been prepared on alumina substrates using a Direct-Write technology. Thick films of 50 to 200 μm were deposited, dried and then sintered at 1000° to 1200°C for 30 minutes in PbO-rich atmosphere. Comparison of the thick film properties revealed that the dielectric constant and remnant polarization of the films sintered at 1100°C were maximum, likely due to a balance between densification and lead loss. The effects of three sintering aids, i.e., lead oxide, lithium bismuth oxide, and a borosilicate glass, have been investigated on the microstructure and electrical properties of the PZT thick films. It was observed that a 2 wt% lithium bismuth oxide additive has a positive effect on the dielectric constant and remnant polarization of the PZT thick films sintered at 1100°C. The microstructures of the films revealed that 3 wt% additives would result in excessive shrinkage and formation of large pores and cracks at a sintering temperature of 1100°C and above. PZT films with 2 wt.% lithium bismuth oxide showed improved dielectric constant (∼40-50%) and remanent polarization (∼65%) compared to additive-free PZT thick films. It was also found that the properties are strongly thickness dependent.

Original languageEnglish (US)
Pages250-253
Number of pages4
StatePublished - Dec 6 2005
Event2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S) - Montreal, Canada
Duration: Aug 23 2004Aug 27 2004

Other

Other2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S)
CountryCanada
CityMontreal
Period8/23/048/27/04

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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