Discrete resistance switching in submicrometer silicon inversion layers: Individual interface traps and low-frequency (1f?) noise

K. S. Ralls; W. J. Skocpol; L. D. Jackel; R. E. Howard; L. A. Fetter; R. W. Epworth; D. M. Tennant

doi:10.1103/PhysRevLett.52.228

Discrete resistance switching in submicrometer silicon inversion layers: Individual interface traps and low-frequency (1f?) noise

K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, D. M. Tennant

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Abstract

Resistance fluctations in submicrometer narrow Si inversion layers are studied over a wide range of temperatures and electron concentrations. Thermally activated switching on and off of discrete resistance increments is observed, caused by the capture and emission of individual electrons at strategically located scatterers (interface traps). The traps have a broad distribution of activation energies, as assumed in accounting for 1f noise in larger devices.

Original language	English (US)
Pages (from-to)	228-231
Number of pages	4
Journal	Physical review letters
Volume	52
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevLett.52.228
State	Published - 1984
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1103/PhysRevLett.52.228

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title = "Discrete resistance switching in submicrometer silicon inversion layers: Individual interface traps and low-frequency (1f?) noise",

abstract = "Resistance fluctations in submicrometer narrow Si inversion layers are studied over a wide range of temperatures and electron concentrations. Thermally activated switching on and off of discrete resistance increments is observed, caused by the capture and emission of individual electrons at strategically located scatterers (interface traps). The traps have a broad distribution of activation energies, as assumed in accounting for 1f noise in larger devices.",

author = "Ralls, {K. S.} and Skocpol, {W. J.} and Jackel, {L. D.} and Howard, {R. E.} and Fetter, {L. A.} and Epworth, {R. W.} and Tennant, {D. M.}",

year = "1984",

doi = "10.1103/PhysRevLett.52.228",

language = "English (US)",

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pages = "228--231",

journal = "Physical review letters",

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T1 - Discrete resistance switching in submicrometer silicon inversion layers

T2 - Individual interface traps and low-frequency (1f?) noise

AU - Ralls, K. S.

AU - Skocpol, W. J.

AU - Jackel, L. D.

AU - Howard, R. E.

AU - Fetter, L. A.

AU - Epworth, R. W.

AU - Tennant, D. M.

PY - 1984

Y1 - 1984

N2 - Resistance fluctations in submicrometer narrow Si inversion layers are studied over a wide range of temperatures and electron concentrations. Thermally activated switching on and off of discrete resistance increments is observed, caused by the capture and emission of individual electrons at strategically located scatterers (interface traps). The traps have a broad distribution of activation energies, as assumed in accounting for 1f noise in larger devices.

AB - Resistance fluctations in submicrometer narrow Si inversion layers are studied over a wide range of temperatures and electron concentrations. Thermally activated switching on and off of discrete resistance increments is observed, caused by the capture and emission of individual electrons at strategically located scatterers (interface traps). The traps have a broad distribution of activation energies, as assumed in accounting for 1f noise in larger devices.

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U2 - 10.1103/PhysRevLett.52.228

DO - 10.1103/PhysRevLett.52.228

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JO - Physical review letters

JF - Physical review letters

IS - 3

ER -

Discrete resistance switching in submicrometer silicon inversion layers: Individual interface traps and low-frequency (1f?) noise

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All Science Journal Classification (ASJC) codes

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