Utilizing metal-vanadium oxide (VO2) -semiconductor capacitor device structures, we have investigated the temperature- and frequency-dependent dielectric and ac conductance responses of vanadium oxide thin films that undergo metal-insulator transition (MIT). In both metallic and insulating regimes, VO2 -based devices showed large tunabilities as high as ∼95% and ∼42%-54%, respectively. The frequency dependence of capacitance and ac conductance displays power-law behavior with respect to temperature and applied voltage over a broad range. Low-frequency dispersion in dielectric properties was also observed and their onset frequency varies across the MIT from ∼0.5 MHz in insulating state to ∼50 kHz in metallic state. The results are of potential relevance to utilizing functional oxides in electronic devices.
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy