Dispersive capacitance and conductance across the phase transition boundary in metal-vanadium oxide-silicon devices

Changhyun Ko, Shriram Ramanathan

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Utilizing metal-vanadium oxide (VO2) -semiconductor capacitor device structures, we have investigated the temperature- and frequency-dependent dielectric and ac conductance responses of vanadium oxide thin films that undergo metal-insulator transition (MIT). In both metallic and insulating regimes, VO2 -based devices showed large tunabilities as high as ∼95% and ∼42%-54%, respectively. The frequency dependence of capacitance and ac conductance displays power-law behavior with respect to temperature and applied voltage over a broad range. Low-frequency dispersion in dielectric properties was also observed and their onset frequency varies across the MIT from ∼0.5 MHz in insulating state to ∼50 kHz in metallic state. The results are of potential relevance to utilizing functional oxides in electronic devices.

Original languageEnglish (US)
Article number034101
JournalJournal of Applied Physics
Volume106
Issue number3
DOIs
StatePublished - 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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