TY - JOUR
T1 - Dissipation in ultrahigh quality factor SiN membrane resonators
AU - Chakram, S.
AU - Patil, Y. S.
AU - Chang, L.
AU - Vengalattore, M.
PY - 2013/12/1
Y1 - 2013/12/1
N2 - We study the mechanical properties of stoichiometric SiN resonators through a combination of spectroscopic and interferometric imaging techniques. At room temperature, we demonstrate ultrahigh quality factors of 5×107 and a f×Q product of 1×1014Hz. To our knowledge, these correspond to the largest values yet reported for mesoscopic flexural resonators. Through a comprehensive study of the limiting dissipation mechanisms as a function of resonator and substrate geometry, we identify radiation loss through the supporting substrate as the dominant loss process. In addition to pointing the way towards higher quality factors through optimized substrate designs, our work realizes an enabling platform for the observation and control of quantum behavior in a macroscopic mechanical system.
AB - We study the mechanical properties of stoichiometric SiN resonators through a combination of spectroscopic and interferometric imaging techniques. At room temperature, we demonstrate ultrahigh quality factors of 5×107 and a f×Q product of 1×1014Hz. To our knowledge, these correspond to the largest values yet reported for mesoscopic flexural resonators. Through a comprehensive study of the limiting dissipation mechanisms as a function of resonator and substrate geometry, we identify radiation loss through the supporting substrate as the dominant loss process. In addition to pointing the way towards higher quality factors through optimized substrate designs, our work realizes an enabling platform for the observation and control of quantum behavior in a macroscopic mechanical system.
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U2 - 10.1103/PhysRevLett.112.127201
DO - 10.1103/PhysRevLett.112.127201
M3 - Article
AN - SCOPUS:84897427954
VL - 112
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 12
M1 - 127201
ER -