Dual-active-layer InGaZnO high-voltage thin-film transistors

Wenxing Huo, Huili Liang, Yicheng Lu, Zuyin Han, Rui Zhu, Yanxin Sui, Tao Wang, Zengxia Mei

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

InGaZnO high-voltage thin-film transistors (HV-TFTs) with vertical dual-active-layer structure and lateral offset design were fabricated at low temperature. The TFT features such as sub-threshold swing, threshold voltage, and hysteresis voltage are similar to those of the normal devices; furthermore, they are independent of the offset length. The blocking voltage of HV-TFTs with an offset of 10 μm is 406 17 V while the ON/OFF ratio reaches 109 at DS= 10 V.

Original languageEnglish (US)
Article number065021
JournalSemiconductor Science and Technology
Volume36
Issue number6
DOIs
StatePublished - Jun 2021
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • IGZO
  • dual-active-layer
  • high-voltage
  • offset
  • thin-film transistors

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