Dual-active-layer InGaZnO high-voltage thin-film transistors

Wenxing Huo; Huili Liang; Yicheng Lu; Zuyin Han; Rui Zhu; Yanxin Sui; Tao Wang; Zengxia Mei

doi:10.1088/1361-6641/abfd17

Dual-active-layer InGaZnO high-voltage thin-film transistors

Wenxing Huo, Huili Liang, Yicheng Lu, Zuyin Han, Rui Zhu, Yanxin Sui, Tao Wang, Zengxia Mei

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

InGaZnO high-voltage thin-film transistors (HV-TFTs) with vertical dual-active-layer structure and lateral offset design were fabricated at low temperature. The TFT features such as sub-threshold swing, threshold voltage, and hysteresis voltage are similar to those of the normal devices; furthermore, they are independent of the offset length. The blocking voltage of HV-TFTs with an offset of 10 μm is 406 17 V while the ON/OFF ratio reaches 109 at DS= 10 V.

Original language	English (US)
Article number	065021
Journal	Semiconductor Science and Technology
Volume	36
Issue number	6
DOIs	https://doi.org/10.1088/1361-6641/abfd17
State	Published - Jun 2021
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

IGZO
dual-active-layer
high-voltage
offset
thin-film transistors

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10.1088/1361-6641/abfd17

Cite this

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title = "Dual-active-layer InGaZnO high-voltage thin-film transistors",

abstract = "InGaZnO high-voltage thin-film transistors (HV-TFTs) with vertical dual-active-layer structure and lateral offset design were fabricated at low temperature. The TFT features such as sub-threshold swing, threshold voltage, and hysteresis voltage are similar to those of the normal devices; furthermore, they are independent of the offset length. The blocking voltage of HV-TFTs with an offset of 10 μm is 406 17 V while the ON/OFF ratio reaches 109 at DS= 10 V.",

keywords = "IGZO, dual-active-layer, high-voltage, offset, thin-film transistors",

author = "Wenxing Huo and Huili Liang and Yicheng Lu and Zuyin Han and Rui Zhu and Yanxin Sui and Tao Wang and Zengxia Mei",

note = "Publisher Copyright: {\textcopyright} 2021 IOP Publishing Ltd.",

year = "2021",

month = jun,

doi = "10.1088/1361-6641/abfd17",

language = "English (US)",

volume = "36",

journal = "Semiconductor Science and Technology",

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TY - JOUR

T1 - Dual-active-layer InGaZnO high-voltage thin-film transistors

AU - Huo, Wenxing

AU - Liang, Huili

AU - Lu, Yicheng

AU - Han, Zuyin

AU - Zhu, Rui

AU - Sui, Yanxin

AU - Wang, Tao

AU - Mei, Zengxia

PY - 2021/6

Y1 - 2021/6

N2 - InGaZnO high-voltage thin-film transistors (HV-TFTs) with vertical dual-active-layer structure and lateral offset design were fabricated at low temperature. The TFT features such as sub-threshold swing, threshold voltage, and hysteresis voltage are similar to those of the normal devices; furthermore, they are independent of the offset length. The blocking voltage of HV-TFTs with an offset of 10 μm is 406 17 V while the ON/OFF ratio reaches 109 at DS= 10 V.

AB - InGaZnO high-voltage thin-film transistors (HV-TFTs) with vertical dual-active-layer structure and lateral offset design were fabricated at low temperature. The TFT features such as sub-threshold swing, threshold voltage, and hysteresis voltage are similar to those of the normal devices; furthermore, they are independent of the offset length. The blocking voltage of HV-TFTs with an offset of 10 μm is 406 17 V while the ON/OFF ratio reaches 109 at DS= 10 V.

KW - IGZO

KW - dual-active-layer

KW - high-voltage

KW - offset

KW - thin-film transistors

UR - http://www.scopus.com/inward/record.url?scp=85107136405&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85107136405&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/abfd17

DO - 10.1088/1361-6641/abfd17

M3 - Article

AN - SCOPUS:85107136405

SN - 0268-1242

VL - 36

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

M1 - 065021

ER -

Dual-active-layer InGaZnO high-voltage thin-film transistors

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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