Abstract
We discuss the successes of the dynamical mean-field (DMF) approach to metal-insulator transitions in both the clean and the disordered limit. In the latter case, standard DMF equations are generalized in order to incorporate both the physics of strong correlation and Anderson localization effects. The results give new insights into the puzzling features of doped semiconductors.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 57-74 |
| Number of pages | 18 |
| Journal | Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences |
| Volume | 356 |
| Issue number | 1735 |
| DOIs | |
| State | Published - Jan 15 1998 |
All Science Journal Classification (ASJC) codes
- General Mathematics
- General Engineering
- General Physics and Astronomy
Keywords
- Anderson localization
- Disorder
- Dynamical mean-field theory
- Local magnetic moments
- Metal-insulator transitions
- Strong correlations