Effect of annealing on Fermi level pinning of low-temperature molecular-beam epitaxial GaAs

Hongen Shen, J. Pamulapati, Robert A. Lux, Mitra Dutta, F. C. Rong, Monica A. Taysing-Lara, L. Fotiadis, L. Calderon, Yicheng Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The Fermi level position in low temperature (LT) GaAs is studied by photoreflectance (PR). The experiments show that the Fermi level in both the as-grown and the annealed LT-GaAs is firmly pinned, however, the pinning position occurs at different energies: 0.47 eV below the conduction band edge for the as-grown samples and 0.65 eV below the conduction band edge for the annealed samples. The pinning in the as-grown LT-GaAs is the result of a high degree of charge compensation of deep levels, while the pinning in the annealed LT-GaAs is due to the depletion of carriers by the Schottky barrier at the metallic As precipitates. From the measured Fermi level and ionization ratio of As antisites, the (0/+) donor level of the As antisite is found to be at Ec - 0.57 eV.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages211-220
Number of pages10
ISBN (Print)0819408395, 9780819408396
DOIs
StatePublished - 1992
Externally publishedYes
EventSpectroscopic Characterization Techniques for Semiconductor Technology IV - Somerset, NJ, USA
Duration: Mar 22 1992Mar 22 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1678
ISSN (Print)0277-786X

Other

OtherSpectroscopic Characterization Techniques for Semiconductor Technology IV
CitySomerset, NJ, USA
Period3/22/923/22/92

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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