Effect of manganese doping on remnant polarization and leakage current in (K0.44,Na0.52,Li0.04) (Nb0.84, Ta0.10,Sb0.06)O3 epitaxial thin films on SrTiO3

M. Abazari, E. K. Akdoǧan, A. Safari

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Abstract

Single phase, epitaxial, 〈001〉 oriented, undoped and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04) × (Nb 0.84,Ta0.10,Sb0.06)O3 thin films of 400 nm thickness were synthesized on SrRuO3 coated SrTi O3. Such films exhibit well saturated hysteresis loops and have a spontaneous polarization (Ps) of 10 μC cm2, which is a 150% higher over the Ps of the undoped composition. The coercive field of 1 mol % Mn doped films is 13 kVcm. Mn-doping results in three orders of magnitude decrease in leakage current above 50 kVcm electric field, which we attribute to the suppression of intrinsic p -type conductivity of undoped films by Mn donors.

Original languageEnglish (US)
Article number212903
JournalApplied Physics Letters
Volume92
Issue number21
DOIs
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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