Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface

S. Dhar; Y. W. Song; L. C. Feldman; T. Isaacs-Smith; C. C. Tin; J. R. Williams; G. Chung; T. Nishimura; D. Starodub; T. Gustafsson; E. Garfunkel

doi:10.1063/1.1651325

Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface

S. Dhar, Y. W. Song, L. C. Feldman, T. Isaacs-Smith, C. C. Tin, J. R. Williams, G. Chung, T. Nishimura, D. Starodub, T. Gustafsson, E. Garfunkel

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Abstract

The effect of nitric oxide postoxidation anneal (NO POA) on the interface state density for dry oxides on (112̄0) 4H-SiC was investigated. It was observed that NO POA decreased the defect state density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface. It was also observed that the channel mobility in 4H-SiC was reduced by field termination, carrier trapping, and Coulomb scattering associated with high density of interface states. Medium energy ion scattering (MEIS) was performed on the (112̄0) 4H-SiC to determine nitrogen incorporation at the SiO ₂/SiC interface.

Original language	English (US)
Pages (from-to)	1498-1500
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	9
DOIs	https://doi.org/10.1063/1.1651325
State	Published - Mar 1 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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Dhar, S., Song, Y. W., Feldman, L. C., Isaacs-Smith, T., Tin, C. C., Williams, J. R., Chung, G., Nishimura, T., Starodub, D., Gustafsson, T., & Garfunkel, E. (2004). Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface. Applied Physics Letters, 84(9), 1498-1500. https://doi.org/10.1063/1.1651325

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title = "Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(11{\=2}0) 4H-SiC interface",

abstract = "The effect of nitric oxide postoxidation anneal (NO POA) on the interface state density for dry oxides on (11{\=2}0) 4H-SiC was investigated. It was observed that NO POA decreased the defect state density near the conduction bandedge of 4H-SiC at the oxide/(11{\=2}0) 4H-SiC interface. It was also observed that the channel mobility in 4H-SiC was reduced by field termination, carrier trapping, and Coulomb scattering associated with high density of interface states. Medium energy ion scattering (MEIS) was performed on the (11{\=2}0) 4H-SiC to determine nitrogen incorporation at the SiO 2/SiC interface.",

author = "S. Dhar and Song, {Y. W.} and Feldman, {L. C.} and T. Isaacs-Smith and Tin, {C. C.} and Williams, {J. R.} and G. Chung and T. Nishimura and D. Starodub and T. Gustafsson and E. Garfunkel",

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doi = "10.1063/1.1651325",

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Dhar, S, Song, YW, Feldman, LC, Isaacs-Smith, T, Tin, CC, Williams, JR, Chung, G, Nishimura, T, Starodub, D, Gustafsson, T & Garfunkel, E 2004, 'Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface', Applied Physics Letters, vol. 84, no. 9, pp. 1498-1500. https://doi.org/10.1063/1.1651325

TY - JOUR

T1 - Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface

AU - Dhar, S.

AU - Song, Y. W.

AU - Feldman, L. C.

AU - Isaacs-Smith, T.

AU - Tin, C. C.

AU - Williams, J. R.

AU - Chung, G.

AU - Nishimura, T.

AU - Starodub, D.

AU - Gustafsson, T.

AU - Garfunkel, E.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - The effect of nitric oxide postoxidation anneal (NO POA) on the interface state density for dry oxides on (112̄0) 4H-SiC was investigated. It was observed that NO POA decreased the defect state density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface. It was also observed that the channel mobility in 4H-SiC was reduced by field termination, carrier trapping, and Coulomb scattering associated with high density of interface states. Medium energy ion scattering (MEIS) was performed on the (112̄0) 4H-SiC to determine nitrogen incorporation at the SiO 2/SiC interface.

AB - The effect of nitric oxide postoxidation anneal (NO POA) on the interface state density for dry oxides on (112̄0) 4H-SiC was investigated. It was observed that NO POA decreased the defect state density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface. It was also observed that the channel mobility in 4H-SiC was reduced by field termination, carrier trapping, and Coulomb scattering associated with high density of interface states. Medium energy ion scattering (MEIS) was performed on the (112̄0) 4H-SiC to determine nitrogen incorporation at the SiO 2/SiC interface.

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DO - 10.1063/1.1651325

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SN - 0003-6951

VL - 84

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EP - 1500

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface

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