Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface

S. Dhar, Y. W. Song, L. C. Feldman, T. Isaacs-Smith, C. C. Tin, J. R. Williams, G. Chung, T. Nishimura, D. Starodub, T. Gustafsson, E. Garfunkel

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