Effect of nitrogen on band alignment in HfSiON gate dielectrics

S. Sayan; N. V. Nguyen; J. Ehrstein; J. J. Chambers; M. R. Visokay; M. A. Quevedo-Lopez; L. Colombo; D. Yoder; I. Levin; D. A. Fischer; M. Paunescu; O. Celik; E. Garfunkel

doi:10.1063/1.2135390

Effect of nitrogen on band alignment in HfSiON gate dielectrics

S. Sayan, N. V. Nguyen, J. Ehrstein, J. J. Chambers, M. R. Visokay, M. A. Quevedo-Lopez, L. Colombo, D. Yoder, I. Levin, D. A. Fischer, M. Paunescu, O. Celik, E. Garfunkel

Rutgers Global

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42 Scopus citations

Abstract

Nitridation of HfSiO films improves certain physical and electrical properties-when using gate stack layers-such as their crystallization temperature and their resistance to interdiffusion. We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission, oxygen K -edge x-ray absorption, and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50 eV±0.05 eV, and the valence- and conduction-band offsets by 1.2 eV±0.1 eV and 0.33 eV±0.05 eV, respectively. Although the band-gap reduction should lead to increased leakage, the barrier heights are still sufficient for proposed near-future complementary metal-oxide-semiconductor applications.

Original language	English (US)
Article number	212905
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	21
DOIs	https://doi.org/10.1063/1.2135390
State	Published - 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2135390

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@article{a17990312b704ed4aea12343a4cea97e,

title = "Effect of nitrogen on band alignment in HfSiON gate dielectrics",

abstract = "Nitridation of HfSiO films improves certain physical and electrical properties-when using gate stack layers-such as their crystallization temperature and their resistance to interdiffusion. We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission, oxygen K -edge x-ray absorption, and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50 eV±0.05 eV, and the valence- and conduction-band offsets by 1.2 eV±0.1 eV and 0.33 eV±0.05 eV, respectively. Although the band-gap reduction should lead to increased leakage, the barrier heights are still sufficient for proposed near-future complementary metal-oxide-semiconductor applications.",

author = "S. Sayan and Nguyen, {N. V.} and J. Ehrstein and Chambers, {J. J.} and Visokay, {M. R.} and Quevedo-Lopez, {M. A.} and L. Colombo and D. Yoder and I. Levin and Fischer, {D. A.} and M. Paunescu and O. Celik and E. Garfunkel",

note = "Funding Information: The authors would like to acknowledge support the NIST Office of Microwelectronic Programs, the SRC and Sematech for partial support of this work.",

year = "2005",

doi = "10.1063/1.2135390",

language = "English (US)",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Effect of nitrogen on band alignment in HfSiON gate dielectrics

AU - Sayan, S.

AU - Nguyen, N. V.

AU - Ehrstein, J.

AU - Chambers, J. J.

AU - Visokay, M. R.

AU - Quevedo-Lopez, M. A.

AU - Colombo, L.

AU - Yoder, D.

AU - Levin, I.

AU - Fischer, D. A.

AU - Paunescu, M.

AU - Celik, O.

AU - Garfunkel, E.

N1 - Funding Information: The authors would like to acknowledge support the NIST Office of Microwelectronic Programs, the SRC and Sematech for partial support of this work.

PY - 2005

Y1 - 2005

N2 - Nitridation of HfSiO films improves certain physical and electrical properties-when using gate stack layers-such as their crystallization temperature and their resistance to interdiffusion. We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission, oxygen K -edge x-ray absorption, and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50 eV±0.05 eV, and the valence- and conduction-band offsets by 1.2 eV±0.1 eV and 0.33 eV±0.05 eV, respectively. Although the band-gap reduction should lead to increased leakage, the barrier heights are still sufficient for proposed near-future complementary metal-oxide-semiconductor applications.

AB - Nitridation of HfSiO films improves certain physical and electrical properties-when using gate stack layers-such as their crystallization temperature and their resistance to interdiffusion. We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission, oxygen K -edge x-ray absorption, and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50 eV±0.05 eV, and the valence- and conduction-band offsets by 1.2 eV±0.1 eV and 0.33 eV±0.05 eV, respectively. Although the band-gap reduction should lead to increased leakage, the barrier heights are still sufficient for proposed near-future complementary metal-oxide-semiconductor applications.

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UR - http://www.scopus.com/inward/citedby.url?scp=27844598939&partnerID=8YFLogxK

U2 - 10.1063/1.2135390

DO - 10.1063/1.2135390

M3 - Article

AN - SCOPUS:27844598939

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212905

ER -

Effect of nitrogen on band alignment in HfSiON gate dielectrics

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