Effect of nitrogen on band alignment in HfSiON gate dielectrics

S. Sayan, N. V. Nguyen, J. Ehrstein, J. J. Chambers, M. R. Visokay, M. A. Quevedo-Lopez, L. Colombo, D. Yoder, I. Levin, D. A. Fischer, M. Paunescu, O. Celik, E. Garfunkel

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42 Scopus citations


Nitridation of HfSiO films improves certain physical and electrical properties-when using gate stack layers-such as their crystallization temperature and their resistance to interdiffusion. We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission, oxygen K -edge x-ray absorption, and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50 eV±0.05 eV, and the valence- and conduction-band offsets by 1.2 eV±0.1 eV and 0.33 eV±0.05 eV, respectively. Although the band-gap reduction should lead to increased leakage, the barrier heights are still sufficient for proposed near-future complementary metal-oxide-semiconductor applications.

Original languageEnglish (US)
Article number212905
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number21
StatePublished - 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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